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MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns

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MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns

Brand Name : original

Model Number : MT41K128M16JT-125 AAT:K

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Memory Type : Volatile

Memory Format : DRAM

Technology : SDRAM - DDR3L

Memory Size : 2Gbit

Memory Organization : 128M x 16

Memory Interface : Parallel

Clock Frequency : 800 MHz

Access Time : 13.75 ns

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MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns

Specifications of MT41K128M16JT-125 AAT:K

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Memory
Mfr Micron Technology Inc.
Series Automotive, AEC-Q100
Package Tray
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page -
Access Time 13.75 ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature -40°C ~ 105°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (8x14)
Base Product Number MT41K128M16


Features of MT41K128M16JT-125 AAT:K

• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• Refresh maximum interval time at TC temperature range
– 64ms at –40°C to +85°C
– 32ms at +85°C to +105°C
– 16ms at +105°C to +115°C
– 8ms at +115°C to +125°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register


Descriptions of MT41K128M16JT-125 AAT:K


The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.


Environmental & Export Classifications of MT41K128M16JT-125 AAT:K

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0036


MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns


China MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns wholesale

MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns Images

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